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| 型號(hào)： | AM29LV008BB90EC |
| 英文描述： | Reference design kit featuring 14-pin synchronous PWM controller for DDR memory application with the voltage tracking capability |
| 中文描述： | x8閃存EEPROM的 |
| 文件頁(yè)數(shù)： | 1/35頁(yè) |
| 文件大?。?/td> | 744K |
| 代理商： | AM29LV008BB90EC |
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This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21354
Issue Date:
November 13, 2000
Rev:
D
Amendment/
+1
Am29LV040B
4 Megabit (512 K x 8-Bit)
CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
Manufactured on 0.32 μm process technology
I
High performance
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as
60 ns
I
Ultra low power consumption (typical values at
5 MHz)
— Automatic sleep mode: 1 μA
— Standby mode: 1 μA
— Read mode: 7 mA
— Program/erase mode: 15 mA
I
Flexible sector architecture
— Eight 64 Kbyte sectors
— Any combination of sectors can be erased;
supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked via programming
equipment
I
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
I
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write/erase cycles
guaranteed
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 32-pin PLCC
— 32-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
I
Erase Suspend/Resume
— Supports reading data from or programming data
to a sector not being erased
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV008BB90EE | x8 Flash EEPROM |
| AM29LV008BB90EI | x8 Flash EEPROM |
| AM29LV008BB90FC | MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:D2PAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| AM29LV008BB90FE | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
| AM29LV008BB90FI | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV008BB-90ED | 制造商:Spansion 功能描述:Flash Memory IC |
| AM29LV008BT-120EC | 制造商:ADV-MICRO-DEV 功能描述: |
| AM29LV008BT-80EC | 制造商:Spansion 功能描述:IC 8 MEG X 8, 3 V FLASH TOP B - Bulk |
| AM29LV008DT-90EC | 制造商:Spansion 功能描述:8M (1MX8) 3V, BOOT BLOCK, TOP, TSOP40, COM - Trays |
| AM29LV010B-45JC | 制造商:Spansion 功能描述:1M (128KX8) 3V, UNIFORM SECTOR, PLCC32, COM - Rail/Tube |
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