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參數(shù)資料
| 型號： | AM29LV008BB90EC |
| 英文描述： | Reference design kit featuring 14-pin synchronous PWM controller for DDR memory application with the voltage tracking capability |
| 中文描述： | x8閃存EEPROM的 |
| 文件頁數(shù)： | 14/35頁 |
| 文件大?。?/td> | 744K |
| 代理商： | AM29LV008BB90EC |
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14
Am29LV040B
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
Notes:
1. See Table 4 for erase command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV008BB90EE | x8 Flash EEPROM |
| AM29LV008BB90EI | x8 Flash EEPROM |
| AM29LV008BB90FC | MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:D2PAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| AM29LV008BB90FE | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
| AM29LV008BB90FI | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV008BB-90ED | 制造商:Spansion 功能描述:Flash Memory IC |
| AM29LV008BT-120EC | 制造商:ADV-MICRO-DEV 功能描述: |
| AM29LV008BT-80EC | 制造商:Spansion 功能描述:IC 8 MEG X 8, 3 V FLASH TOP B - Bulk |
| AM29LV008DT-90EC | 制造商:Spansion 功能描述:8M (1MX8) 3V, BOOT BLOCK, TOP, TSOP40, COM - Trays |
| AM29LV010B-45JC | 制造商:Spansion 功能描述:1M (128KX8) 3V, UNIFORM SECTOR, PLCC32, COM - Rail/Tube |
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