參數(shù)資料
型號： AM29LV040B-90FI
英文描述： x8 Flash EEPROM
中文描述： x8閃存EEPROM的
文件頁數(shù)： 30/35頁
文件大?。?/td> 744K
代理商： AM29LV040B-90FI
30
Am29LV040B
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
WHWH1 or 2
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Notes:
1. PA = Program Address, PD = Program Data, DQ7# = complement of the data written to the device, D
OUT
is the data written
to the device.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 17.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
AM29LV040B-90JC 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AM29LV002BB-90EE IR2171 is not recommended for new designs.
AM29LV002BB-90EI IR2172 is not recommended for new designs.
AM29LV002BB-90FC IR2172S is not recommended for new designs.
AM29LV002BB-90FE MOSFET Driver IC; Driver Type:High-Side; Package/Case:8-SOIC; Leaded Process Compatible:No; No. of Drivers:1; Offset Voltage:600V; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Sink Output Current:20mA RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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