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參數(shù)資料
| 型號： | AM29LV081B120ED |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | 8兆位（1米× 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃存 |
| 文件頁數(shù)： | 18/40頁 |
| 文件大?。?/td> | 438K |
| 代理商： | AM29LV081B120ED |
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16
Am29LV081B
21525D6
October 12, 2006
DA T A S HE E T
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A19–A13 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. All address bits are don’t cares for unlock and command
cycles, except when SA or PA required.
5. No unlock or command cycles required when reading array
data.
6. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is a
read cycle.
8. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
9. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
10. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the unlock bypass
mode.
11. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
12. The Erase Resume command is valid only during the Erase
Suspend mode.
Command Definitions
Table 4. Am29LV081B Command Definitions
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2-4)
Third
Addr
Data
First
Second
Addr
Fourth
Addr
Fifth
Sixth
Addr
RA
XXX
XXX
XXX
XXX
XXX
XXX
XXX
XXX
XXX
XXX
XXX
XXX
XXX
Data
RD
F0
AA
AA
Data
Data
Addr Data
Addr
Data
Read (Note 5)
Reset (Note 6)
1
1
4
4
Auto-
select
(Note 7)
Manufacturer ID
Device ID
XXX
XXX
XXX
XXX
XXX
XXX
XXX
XXX
XXX
XXX
55
55
XXX
XXX
XXX
XXX
XXX
XXX
90
90
X00
X01
01
38
00
01
PD
Sector Protect Verify
(Note 8)
4
AA
55
90
(SA)
X02
Program
Unlock Bypass
Unlock Bypass Program (Note 9)
Unlock Bypass Reset (Note 10)
Chip Erase
Sector Erase
Erase Suspend (Note 11)
Erase Resume (Note 12)
4
3
2
2
6
6
1
1
AA
AA
A0
90
AA
AA
B0
30
55
55
PD
00
55
55
A0
20
PA
XXX
XXX
80
80
XXX
XXX
AA
AA
XXX
XXX
55
55
XXX
SA
10
30
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV081B120EE | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV081B120EF | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV081B120EI | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV081B120EK | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV081B-70ED | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV081B-120ED | 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB |
| AM29LV081B-120ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29LV081B-70EC | 制造商:Advanced Micro Devices 功能描述: 制造商:Atmel Corporation 功能描述: |
| AM29LV081B-70ED | 制造商:Spansion 功能描述:IC FLASH MEMORY PARALLEL 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP |
| AM29LV081B-70ED | 制造商:Spansion 功能描述:Flash Memory IC |
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