參數(shù)資料
型號(hào): AM29LV081B120ED
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 3.0伏特,只有統(tǒng)一部門閃存
文件頁數(shù): 27/40頁
文件大小: 438K
代理商: AM29LV081B120ED
21525D6
October 12, 2006
Am29LV081B
25
D AT A S H E E T
AC CHARACTERISTICS
Read Operations
Notes:
1. Not 100% tested.
2. See Figure 11 Figure 11and Table 6Table 6 for test specifications.
Parameter
Description
Speed Option
JEDEC
Std
Test Setup
-70
-90
-120
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
70
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE# = V
IL
OE# = V
IL
Max
70
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
70
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
25
30
30
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
25
30
30
ns
t
OEH
Output Enable
Hold Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
Min
0
ns
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
OE
0 V
RY/BY#
RESET#
t
DF
t
OH
Figure 13. Read Operations Timings
相關(guān)PDF資料
PDF描述
AM29LV081B120EE 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EF 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EI 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EK 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-70ED 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
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