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參數(shù)資料
| 型號(hào)： | AM29LV116M |
| 英文描述： | Flash Memory |
| 中文描述： | 閃存 |
| 文件頁(yè)數(shù)： | 26/35頁(yè) |
| 文件大?。?/td> | 744K |
| 代理商： | AM29LV116M |
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26
Am29LV040B
AC CHARACTERISTICS
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
AS
t
WPH
t
VCS
555h
PA
PA
Read Status Data (last two cycles)
A0h
t
CS
Status
D
OUT
Program Command Sequence (last two cycles)
t
CH
PA
Note:
PA = program address, PD = program data, D
OUT
is the true data at the program address.
Figure 12.
Program Operation Timings
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
Note:
SA = sector address (for Sector Erase), VA = Valid Address for reading status data (
see “Write Operation Status”).
Figure 13.
Chip/Sector Erase Operation Timings
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