參數(shù)資料
型號(hào): AM29LV116M
英文描述: Flash Memory
中文描述: 閃存
文件頁(yè)數(shù): 35/35頁(yè)
文件大?。?/td> 744K
代理商: AM29LV116M
Am29LV040B
35
REVISION SUMMARY
Revision A (January 1998)
Revision B (April 1998)
Expanded data sheet from Advanced Information to
Preliminary version.
Revision B+1 (November 1998)
Connection Diagrams
Corrected the standard TSOP pinout.
Revision C (January 1999)
Distinctive Characteristics
Added 20-year data retention subbullet.
Revision C+1 (May 18, 1999)
Removed preliminary designation from data sheet.
Revision C+2 (July 20, 1999)
Physical Dimensions
Corrected the unit of measurement for the 32-pin PLCC
to inches.
Revision D (November 11, 1999)
Global
Changed all references to 55R speed option (55 ns,
regulated voltage range) to 60R (60 ns, regulated
voltage range).
Physical Dimensions
Replaced all drawings with new versions.
AC Characteristics—Figure 12. Program
Operations Timing and Figure 13. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Revision D+1 (November 13, 2000)
Global
Added table of contents. Deleted burn-in option from
Ordering Information section.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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