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參數(shù)資料
| 型號(hào)： | Am29LV160MB100 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | CAP.FT, 33UF, 10V, 10%,CWR06 |
| 中文描述： | 16兆位（2米× 8位/ 1個(gè)M x 16位），3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 19/60頁(yè) |
| 文件大?。?/td> | 1849K |
| 代理商： | AM29LV160MB100 |
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August 11, 2003 25974B0
Am29LV160M
17
P r e l i m i n a r y
Figure 2. In-System Single High Voltage Sector Protect/Unprotect Algorithms
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Set up sector
address
Wait 150 μs
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
START
PLSCNT = 1
RESET# = V
ID
Wait 1 ms
First Write
Cycle = 60h
Data = 01h
Remove V
ID
from RESET#
Write reset
command
Sector Protect
complete
Yes
Yes
No
PLSCNT
= 25
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Set up first sector
address
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
START
PLSCNT = 1
RESET# = V
ID
Wait 1 ms
Data = 00h
Last sector
verified
Remove V
ID
from RESET#
Write reset
command
Sector Unprotect
complete
Yes
No
PLSCNT
= 1000
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No
All sectors
protected
Yes
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
Set up
next sector
address
No
Yes
No
Yes
No
No
Yes
No
In-System Single
High Voltage
Sector Protect
Algorithm
In-System Single
High Voltage
Sector Unprotect
Algorithm
First Write
Cycle = 60h
Protect another
sector
Reset
PLSCNT = 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV160MB100EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB100FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV160MT100 | CAP 0.01UF 100V 100V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 STANDOFF |
| AM29LV160MT100EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT100FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MB-100EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 100ns 48-Pin TSOP 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP |
| AM29LV160MB100PCIT | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 100NS 64BGA - Tape and Reel |
| AM29LV160MB-100WAI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 100ns 48-Pin FBGA |
| AM29LV160MB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 120ns 48-Pin TSOP |
| AM29LV160MB70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
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