參數(shù)資料
型號(hào): AM29LV160MB100EI
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16兆位(2米× 8位/ 1個(gè)M x 16位),3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 43/60頁
文件大小: 1849K
代理商: AM29LV160MB100EI
August 11, 2003 25974B0
Am29LV160M
41
P r e l i m i n a r y
AC Characteristics
Read Operations
Notes:
1. Not 100% tested.
2. See
Figure 11
and Table
13
for test specifications.
Figure 13. Read Operations Timings
Parameter
Description
Speed Options
J EDEC
Std
Test Setup
70R
85
90
100
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
70
85
90
100
ns
t
AVQV
t
ACC
Address to Output Delay
CE# = V
IL
OE# = V
IL
Max
70
85
90
100
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
70
85
90
100
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
35
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
25
30
30
30
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
25
30
30
30
ns
t
OEH
Output Enable
Hold Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE#
or OE#, Whichever Occurs First (Note 1)
Min
0
ns
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
OE
0 V
RY/BY#
RESET#
t
DF
t
OH
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