參數(shù)資料
型號(hào)： AM29LV160MT100EI
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述： 16兆位（2米× 8位/ 1個(gè)M x 16位），3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 13/60頁(yè)
文件大?。?/td> 1849K
代理商： AM29LV160MT100EI
August 11, 2003 25974B0
Am29LV160M
11
P r e l i m i n a r y
The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the mem-
ory content occurs during the power transition. No command is necessary in
this mode to obtain array data. Standard microprocessor read cycles that as-
sert valid addresses on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read access until the com-
mand register contents are altered.
See
“Reading Array Data”
for more information. Refer to the AC
Read Operations
table for timing specifications and to
Figure 13
for the timing diagram. I
CC1
in the
DC Characteristics table represents the active current specification for reading
array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to V
IL
, and OE# to V
IH
.
For program operations, the BYTE# pin determines whether the device accepts
program data in bytes or words. Refer to
“Word/Byte Configuration”
for more
information.
The device features an
Unlock Bypass
mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The
“Word/Byte Program
Command Sequence”
section has details on programming data to the device
using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Tables 2 and 3 indicate the address space that each sector occupies. A “sector
address” consists of the address bits required to uniquely select a sector. The
“Command Definitions”
section has details on erasing a sector or the entire chip,
or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to the
“Autoselect Mode”
and
“Autoselect
Command Sequence”
sections for more information.
I
CC2
in the DC Characteristics table represents the active current specification for
the write mode. The
“AC Characteristics”
section contains timing specification ta-
bles and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the
operation by reading the status bits on DQ7–DQ0. Standard read cycle timings
and I
CC
read specifications apply. Refer to
“Write Operation Status”
for more in-
formation, and to
“AC Characteristics”
for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
相關(guān)PDF資料
PDF描述
AM29LV160MT100FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT100WAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB100WAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
Am29LV160MB90 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
Am29LV160MT90 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
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