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參數(shù)資料
| 型號： | AM29LV160MT100EI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位），3.0伏的MirrorBit只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 29/60頁 |
| 文件大?。?/td> | 1849K |
| 代理商： | AM29LV160MT100EI |
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August 11, 2003 25974B0
Am29LV160M
27
P r e l i m i n a r y
The system can monitor DQ3 to determine if the sector erase timer has timed
out. (See the
“DQ3: Sector Erase Timer”
section.) The time-out begins from the
rising edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the Erase Suspend command is
valid. All other commands are ignored. Note that a
hardw are reset
during the
sector erase operation immediately terminates the operation. The Sector Erase
command sequence should be reinitiated once the device has returned to reading
array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. (Refer to
“Write Operation Status”
for information on these status bits.)
Figure 5
illustrates the algorithm for the erase operation. Refer to the
Erase/Pro-
gram Operations
tables in the
“AC Characteristics”
section for parameters, and to
Figure 18
for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase oper-
ation and then read data from, or program data to, any sector not selected for
erasure. This command is valid only during the sector erase operation, including
the 50 μs time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if written during the chip erase operation or Em-
bedded Program algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the time-out period and suspends
the erase operation. Addresses are “don’t-cares” when writing the Erase Suspend
command.
When the Erase Suspend command is written during a sector erase operation, the
device requires a maximum of 20 μs to suspend the erase operation. However,
when the Erase Suspend command is written during the sector erase time-out,
the device immediately terminates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the system can read array data
from or program data to any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal read and write timings and
command definitions apply. Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and
DQ2 together, to determine if a sector is actively erasing or is erase-suspended.
See
“Write Operation Status”
for information on these status bits.
After an erase-suspended program operation is complete, the system can once
again read array data within non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. S ee
“Write Operation S tatus”
for more
information.
The system may also write the autoselect command sequence when the device
is in the Erase Suspend mode. The device allows reading autoselect codes even
at addresses within erasing sectors, since the codes are not stored in the memory
array. When the device exits the autoselect mode, the device reverts to the Erase
Suspend mode, and is ready for another valid operation. See
“Autoselect Com-
mand Sequence”
for more information.
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PDF描述 |
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| AM29LV160MT100FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT100WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB100WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MT110EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 3V, MIRRORBIT, TOP, TSOP48, IND - Trays |
| AM29LV160MT70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV200BB-120EC | 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| AM29LV200BB-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV200BB-90FC | 制造商:Advanced Micro Devices 功能描述:2 Mb (128K x 16) Boot Sector, Flash Memory |
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