參數(shù)資料
型號(hào): AM29LV160MT100FI
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16兆位(2米× 8位/ 1個(gè)M x 16位),3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 46/60頁(yè)
文件大小: 1849K
代理商: AM29LV160MT100FI
44
Am29LV160M
25974B0 August 11, 2003
P r e l i m i n a r y
AC Characteristics
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the
“Erase and Programming Performance”
section for more information.
Parameter
Speed Options
J EDEC
Std
Description
70R
85
90
100
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
85
90
100
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
45
50
ns
t
DVWH
t
DS
Data Setup Time
Min
35
45
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
35
35
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
12
μs
Word
Typ
12
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
RB
Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
相關(guān)PDF資料
PDF描述
AM29LV160MT100WAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB100WAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
Am29LV160MB90 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
Am29LV160MT90 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160M 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
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