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參數(shù)資料
| 型號： | AM29LV160MT30EI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位）的MirrorBit?3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 14/63頁 |
| 文件大?。?/td> | 967K |
| 代理商： | AM29LV160MT30EI |
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12
Am29LV160M
25974B5 January31,2007
D a t a S h e e t
The device enters the CMOS standby mode when the CE# and RESET# pins are
both held at V
CC
±
0.3 V. (Note that this is a more restricted voltage range than
V
IH
.) If CE# and RESET# are held at V
IH
, but not within V
CC
±
0.3 V, the device
is in the standby mode, but the standby current is greater. The device requires
standard access time (t
CE
) for read access when the device is in either of these
standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws ac-
tive current until the operation is completed.
In the table
“CMOS Compatible” on page 40
, I
CC3
and I
CC4
represents the standby
current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The
device automatically enables this mode when addresses remain stable for t
ACC
+
30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE#
control signals. S tandard address access timings provide new data when
addresses are changed. While in sleep mode, output data is latched and always
available to the system. I
CC4
in the table
“CMOS Compatible” on page 40
represents the automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading
array data. When the system drives the RESET# pin to V
IL
for at least a period of
t
RP
, the device
immediately terminates
any operation in progress, tristates all
data output pins, and ignores all read/write attempts for the duration of the RE-
SET# pulse. The device also resets the internal state machine to reading array
data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held
at V
SS
± 0.3 V, the device draws CMOS standby current (I
CC4
). If RESET# is held
at V
IL
but not within V
SS
± 0.3 V, the standby current is greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the Flash memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin re-
mains a “0” (busy) until the internal reset operation is complete, which requires
a time of t
READY
(during Embedded Algorithms). The system can thus monitor
RY/BY# to determine whether the reset operation is complete. If RESET# is as-
serted when a program or erase operation is not executing (RY/BY# pin is “1”),
the reset operation is completed within a time of t
READY
(not during Embedded
Algorithms). The system can read data t
RH
after the RESET# pin returns to V
IH
.
Refer to the
“AC Characteristics” on page 42
for RESET# parameters and to
Fig-
ure 14, on page 43
for the timing diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is disabled. The output pins
are placed in the high impedance state.
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