參數(shù)資料
型號(hào)： AM29LV160MT70RFI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
中文描述： 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： REVERSE, MO-142B, TSOP-48
文件頁(yè)數(shù)： 13/63頁(yè)
文件大?。?/td> 967K
代理商： AM29LV160MT70RFI
January31,2007 25974B5
Am29LV160M
11
D a t a S h e e t
The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the mem-
ory content occurs during the power transition. No command is necessary in
this mode to obtain array data. Standard microprocessor read cycles that as-
sert valid addresses on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read access until the com-
mand register contents are altered.
See
“Reading Array Data” on page 23
for more information. Refer to the table
“Read Operations” on page 42
for timing specifications and to
Figure 13, on page
42
for the timing diagram. I
CC1
in the table
“CMOS Compatible” on page 40
rep-
resents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to V
IL
, and OE# to V
IH
.
For program operations, the BYTE# pin determines whether the device accepts
program data in bytes or words. Refer to
“Word/Byte Configuration” on page 10
for more information.
The device features an
Unlock Bypass
mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The
“Word/Byte Program
Command Sequence” on page 24
contains details on programming data to the
device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 2, on page 13
and
Table 3, on page 14
indicate the address space that each
sector occupies. A “sector address” consists of the address bits required to
uniquely select a sector. The sector
“Command Definitions” on page 23
contains
details on erasing a sector or the entire chip, or suspending/resuming the erase
operation.
After the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to the sections
“Autoselect Mode” on
page 15
and
“Autoselect Command Sequence” on page 24
for more information.
I
CC2
in the DC Characteristics table represents the active current specification for
the write mode. The section
“AC Characteristics” on page 42
contains timing
specification tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the
operation by reading the status bits on DQ7–DQ0. Standard read cycle timings
and I
CC
read specifications apply. Refer to
“Write Operation Status” on page 33
for more information, and to
“AC Characteristics” on page 42
for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
相關(guān)PDF資料
PDF描述
AM29LV160MT70RPCI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT70RWAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT85EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT85FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
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