參數(shù)資料
型號: AM29LV160MT70RFI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
中文描述: 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: REVERSE, MO-142B, TSOP-48
文件頁數(shù): 28/63頁
文件大?。?/td> 967K
代理商: AM29LV160MT70RFI
26
Am29LV160M
25974B5 January31,2007
D a t a S h e e t
Notes:
See Tables 10 and 11 for program command sequence.
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does
not
require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations.
Table 10, on page 31
and
Table 11, on page 32
show the address and data requirements for the chip erase command sequence.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavail-
able when an erase operation is in progress.
Any commands written to the chip during the Embedded Erase algorithm are ig-
nored. Note that a
hardw are reset
during the chip erase operation immediately
terminates the operation. The Chip Erase command sequence should be reiniti-
ated once the device returns to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. See
“Autoselect Command Sequence” on page 24
for informa-
tion on these status bits. When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are no longer latched.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29LV160MT70RPCI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT70RWAI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT85EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT85FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT85PCI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV200BB-120EC 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48
AM29LV200BB-90EC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP
AM29LV200BB-90FC 制造商:Advanced Micro Devices 功能描述:2 Mb (128K x 16) Boot Sector, Flash Memory
AM29LV256MH120RPGI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays
AM29LV256MH123RPGI 制造商:Advanced Micro Devices 功能描述: