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參數(shù)資料
| 型號： | AM29LV200BT-90SK |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 2兆位（256Kx8Bit/128Kx16位），3.0伏的CMOS引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 20/46頁 |
| 文件大?。?/td> | 716K |
| 代理商： | AM29LV200BT-90SK |
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18
Am29LV200B
21521D6 October 10, 2006
DA T A S HE E T
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
Notes:
1. See Table 5 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 4. Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV200BT-90WAC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200BT-90WAD | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200BB-120EF | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200BB-120EK | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200BB-120SD | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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