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參數(shù)資料
| 型號： | AM29LV256MH113RFI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| 中文描述： | 16M X 16 FLASH 3V PROM, 110 ns, PDSO56 |
| 封裝： | REVERSE, MO-142B, TSOP-56 |
| 文件頁數(shù)： | 61/70頁 |
| 文件大?。?/td> | 1655K |
| 代理商： | AM29LV256MH113RFI |
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September 15, 2003
Am29LV256M
59
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Byte/Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation with V
IO
≠
V
CC
Parameter
Speed Options
JEDEC
Std.
Description
103, 103R
113, 113R
123, 123R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Byte
Typ
7.5
μs
Per Word
Typ
15
μs
Effective Accelerated Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
6.25
μs
Per Word
Typ
12.5
μs
Single Byte/Word
Program Operation (Note 2, 5)
Byte
Typ
60
μs
Word
Typ
60
μs
Accelerated Single Byte/Word
Programming Operation
(Note 2, 5)
Byte
Typ
54
μs
Word
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV256MH113RPGI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256ML123REI | CAP, FILM, 0.22UF, 100V, PPS, 2825,5%,SM |
| AM29LV256M | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| Am29LV256MH113R | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH123RPGI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
| AM29LV256MH123RPGI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV256MH94REI | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays |
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
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