- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366501 > AM29LV256MH113RFI (ADVANCED MICRO DEVICES INC) 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control PDF資料下載
參數(shù)資料
| 型號： | AM29LV256MH113RFI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| 中文描述： | 16M X 16 FLASH 3V PROM, 110 ns, PDSO56 |
| 封裝： | REVERSE, MO-142B, TSOP-56 |
| 文件頁數(shù)： | 69/70頁 |
| 文件大?。?/td> | 1655K |
| 代理商： | AM29LV256MH113RFI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁當前第69頁第70頁
September 15, 2003
Am29LV256M
67
D A T A S H E E T
Revision C+1 (May 28, 2003)
Global
Converted to full datasheet version.
Modified SecSi Sector Flash Memory Region section
to include ESN references.
Erase and Programming Performance
Input values into table that were previously TBD.
Modified notes.
CMOS Compatible
Corrected typos in table.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
Changed the typical for the Accelerated Effective
Write Buffer Program Operation for Byte and Word to
6.25 and 12.5.
Revision C+2 (June 11, 2003)
Global
Modified speed grades available.
Revision C+3 (September 15, 2003)
Ordering Information
Added OPN note for ESN feature.
Tables 11 & 12 Command Definitions
Changed definition BA to XXX for Program/Erase Sus-
pend (Note 16) and for Program/Erase Resume (Note
17).
Program Suspend/Program Resume Command
Sequence
Removed - program suspended sector is required
when writing this command.
AC Characteristics - Hardware Reset
Added information for
t
RB.
AC Characteristics - Erase and Program
Operations
Added information for
t
BUSY
.
Trademarks
Copyright 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV256MH113RPGI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256ML123REI | CAP, FILM, 0.22UF, 100V, PPS, 2825,5%,SM |
| AM29LV256M | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| Am29LV256MH113R | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH123RPGI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
| AM29LV256MH123RPGI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV256MH94REI | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays |
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
發(fā)布緊急采購，3分鐘左右您將得到回復。