參數(shù)資料
型號(hào): AM29LV320DB120WMI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 120 ns, PBGA48
封裝: 6 X 12 MM, 0.80 MM PITCH, FBGA-48
文件頁(yè)數(shù): 14/57頁(yè)
文件大?。?/td> 636K
代理商: AM29LV320DB120WMI
12
Am29LV320D
December 14, 2005
D A T A S H E E T
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at V
CC
± 0.3 V.
(Note that this is a more restricted voltage range than
V
IH
.) If CE# and RESET# are held at V
IH
, but not within
V
CC
± 0.3 V, the device is in the standby mode, but the
standby current is greater. The device requires stan-
dard access time (t
CE
) for read access when the de-
vice is in either of these standby modes, before it is
ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
I
CC3
in the
DC Characteristics
table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for t
ACC
+
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
I
CC4
in the “DC Characteristics” on page 35 table rep-
resents the automatic sleep mode current specifica-
tion.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of t
RP
, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
SS
±0.3 V, the device
draws CMOS standby current (I
CC4
). If RESET# is held
at V
IL
but not within V
SS
±0.3 V, the standby current is
greater.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase op-
eration, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t
READY
(during Embedded Algorithms). The sys-
tem can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of t
READY
(not during Embedded Algo-
rithms). The system can read data t
RH
after the RE-
SET# pin returns to V
IH
.
Refer to the
AC Characteristics
tables for RESET# pa-
rameters and to
Figure 15, on page 39
for the timing
diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is
disabled. The output pins are placed in the high
impedance state.
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