參數(shù)資料
型號(hào)： AM29LV320DB90EI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述： 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： MO-142B, TSOP-48
文件頁(yè)數(shù)： 13/57頁(yè)
文件大?。?/td> 636K
代理商： AM29LV320DB90EI
December 14, 2005
Am29LV320D
11
D A T A S H E E T
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word con-
figuration, DQ0–DQ15 are active and controlled by
CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
IL
. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at V
IH
. The BYTE# pin determines
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See “Requirements for Reading Array Data” on
page 11 for more information. Refer to the AC
Read-Only Operations
table for timing specifications
and to
Figure 14, on page 38
for the timing diagram.
I
CC1
in the DC Characteristics table represents the ac-
tive current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
IL
, and OE# to V
IH
.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” on page 11
for more information.
The device features an
Unlock Bypass
mode to facili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The
“Word/Byte Configuration” on page 11 section con-
tains details on programming data to the device using
both standard and Unlock Bypass command se-
quences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Table 2 on page 13 through
Table 5 on page 15 indicate the address space that
each sector occupies. A “sector address” is the ad-
dress bits required to uniquely select a sector.
I
CC2
in the DC Characteristics table represents the ac-
tive current specification for the write mode. The “AC
Characteristics” on page 38 section contains timing
specification tables and timing diagrams for write oper-
ations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is prima-
rily intended to allow faster manufacturing throughput
at the factory.
If the system asserts V
HH
on this pin, the device auto-
matically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
V
HH
from the WP#/ACC pin returns the device to nor-
mal operation. Note that the WP#/ACC pin must not be
at V
HH
for operations other than accelerated program-
ming, or device damage may result. In addition, the
WP#/ACC pin must not be left floating or unconnected;
inconsistent behavior of the device may result.
Autoselect Functions
If the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the “Autoselect Mode” on page 16
and “Autoselect Command Sequence” on page 25
sections for more information.
I
CC6
and I
CC7
in the
DC Characteristics
table represent
the current specifications for read-while-program and
read-while-erase, respectively.
相關(guān)PDF資料
PDF描述
AM29LV320DB120ED 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV320DB120EF 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV320DB120EI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV320DB120EV 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV320DB120EY 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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