參數(shù)資料
型號: Am29LV640DH90RZE
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: 64兆位(4個(gè)M x 16位),3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù): 32/57頁
文件大?。?/td> 1467K
代理商: AM29LV640DH90RZE
September 20, 2002
Am29LV640D/Am29LV641D
37
TEST CONDITIONS
Table 12.
Test Specifications
Note: If V
IO < VCC, the reference level is 0.5 VIO.
KEY TO SWITCHING WAVEFORMS
2.7 k
CL
6.2 k
3.3 V
Device
Under
Test
Note: Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Test Condition
90R,
101R
120R,
121R
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 V
IO
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
0.5 VIO V
Output
Measurement Level
Input
Note: If V
IO < VCC, the input measurement reference level is 0.5 VIO.
Figure 12.
Input Waveforms and
Measurement Levels
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