參數(shù)資料
型號(hào): Am29LV640DH90RZE
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: 64兆位(4個(gè)M x 16位),3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù): 33/57頁
文件大?。?/td> 1467K
代理商: AM29LV640DH90RZE
38
Am29LV640D/Am29LV641D
September 20, 2002
AC CHARACTERISTICS
Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 12 for test specifications.
Parameter
Description
Test Setup
Speed Options
JEDEC
Std.
90R
101R
120R,
121R
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
100
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
90
100
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
100
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
30
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
tOH
tCE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
tRC
tACC
tOEH
tRH
tOE
tRH
0 V
RY/BY#
RESET#
tDF
Figure 13.
Read Operation Timings
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