參數(shù)資料
型號(hào)： Am29LV640DL90RZE
廠(chǎng)商： Advanced Micro Devices, Inc.
英文描述： 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述： 64兆位（4個(gè)M x 16位），3.0伏的CMOS只均勻部門(mén)閃光控制記憶與VersatileI
文件頁(yè)數(shù)： 17/57頁(yè)
文件大?。?/td> 1467K
代理商： AM29LV640DL90RZE
September 20, 2002
Am29LV640D/Am29LV641D
23
Table 7.
System Interface String
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
1Bh
0027h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
V
PP Min. voltage (00h = no VPP pin present)
1Eh
0000h
V
PP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single byte/word write 2
N s
20h
0000h
Typical timeout for Min. size buffer write 2
N s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N ms
22h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2
N times typical
24h
0000h
Max. timeout for buffer write 2
N times typical
25h
0004h
Max. timeout per individual block erase 2
N times typical
26h
0000h
Max. timeout for full chip erase 2
N times typical (00h = not supported)
Addresses (x16)
Data
Description
27h
0017h
Device Size = 2
N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
007Fh
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
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