參數(shù)資料
型號: AM29LV640MH101EF
廠商: SPANSION LLC
元件分類: PROM
英文描述: 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: MO-142B, TSOP-56
文件頁數(shù): 18/59頁
文件大?。?/td> 1590K
代理商: AM29LV640MH101EF
February 16, 2003
Am29LV640MH/L
25
ADV ANCE
I N FO RMAT I O N
w h ic h the s y s t em c a n read data f r om any
non-erase-suspended sector. After completing a pro-
gramming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See the Erase Suspend/Erase Resume
Commands section for more information.
The system must issue the reset command to return
the device to the read (or erase-suspend-read) mode
if DQ5 goes high during an active program or erase
operation, or if the device is in the autoselect mode.
See the next section, Reset Command, for more infor-
mation.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read pa-
rameters, and Figure 14 shows the timing diagram.
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming be-
gins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the de-
vice entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Pro-
gramming operation, the system must write the
Write-to-Buffer-Abort Reset command sequence to
reset the device for the next operation.
Autoselect Command Sequence
The autoselect command sequence allows the host
system to read several identifier codes at specific ad-
dresses:
Note: The device ID is read over three cycles. SA = Sector
Address
Tables 10 and 11 show the address requirements and
codes. This method is an alternative to that shown in
Table 3, which is intended for PROM programmers
and requires V
ID on address pin A9. The autoselect
command sequence may be written to an address that
is either in the read or erase-suspend-read mode. The
autoselect command may not be written while the de-
vice is actively programming or erasing.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence:
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the de-
vice was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing an 8-word/16-byte random Electronic Serial
Number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi
Sector command sequence. The device continues to
access the SecSi Sector region until the system is-
sues the four-cycle Exit SecSi Sector command se-
quence. The Exit SecSi Sector command sequence
returns the device to normal operation. Tables 10 and
11 show the address and data requirements for both
command sequences. See also “SecSi (Secured Sili-
con) Sector Flash Memory Region” for further informa-
tion. Note that the ACC function and unlock bypass
modes are not available when the SecSi Sector is en-
abled.
Word/Byte Program Command Sequence
Programming is a four-bus-cycle operation. The pro-
gram command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
Identifier Code
A7:A0
(x16)
A6:A-1
(x8)
Manufacturer ID
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
SecSi Sector Factory Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
相關(guān)PDF資料
PDF描述
AM2D-11G ACTIVE DELAY LINE, TRUE OUTPUT, PDSO8
AI4D-4J ACTIVE DELAY LINE, TRUE OUTPUT, PDSO14
AM3D-11J ACTIVE DELAY LINE, TRUE OUTPUT, PDSO8
AM3D-25J ACTIVE DELAY LINE, TRUE OUTPUT, PDSO8
AM3D-35J ACTIVE DELAY LINE, TRUE OUTPUT, PDSO8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV640MH112REI 制造商:Advanced Micro Devices 功能描述:4M X 16 FLASH 3V PROM, 110 ns, PDSO56
AM29LV640MU101RPCI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90NI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90RPC1 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90RPCI 制造商:Advanced Micro Devices 功能描述: