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參數(shù)資料
| 型號(hào)： | AM29LV640MH101EF |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142B, TSOP-56 |
| 文件頁數(shù)： | 53/59頁 |
| 文件大小： | 1590K |
| 代理商： | AM29LV640MH101EF |
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February 16, 2003
Am29LV640MH/L
57
ADV ANCE
I N FO RMAT I O N
REVISION SUMMARY
Revision A (March 19, 2002)
Initial release as abbreviated Advance Information
data sheet. This document contains information that
was previously released in publication number 25301.
Ordering Information
The package marking for the Fortified BGA option has
been updated.
Physical Dimensions
Added drawing that shows both TS056 and TSR056
specifications.
Revision B (April 26, 2002)
Expanded data sheet to full specification version.
Revision C (May 23, 2002)
Changed packaging from 63-ball FBGA to 64-ball For-
tified BGA.
Changed Block Diagram: Moved V
IO from RY/BY# to
Input/Output Buffers.
Changed note about WP#/ACC pin to indicate internal
pullup to V
CC.
Modified Table 4: Sector Group Protection/Unprotec-
tion Address Table.
Changed 47h Address data from 0004h to 0001h in
Table 9.
Revision D (August 8, 2002)
Alternate CE# Controlled Erase and Program
Operations
Added t
RH parameter to table.
Erase and Program Operations
Added t
BUSY parameter to table.
TSOP and BGA PIN Capacitance
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15
s typical to maximum and added 5 s
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20
s to 5 s and added a maxi-
mum of 20
s.
Special package handling instructions
Modified the special handling wording.
DC Characteristics table
Deleted the Iacc specification row.
CFI
Changed text in the third paragraph of CFI to read
“reading array data.”
Revision D+1 (September 10, 2002)
Product Selector Guide
Added Note 2.
Ordering Information
Added Note 1.
Sector Erase Command Sequence
Deleted statement that describes the outcome of when
the Embedded Erase operation is in progress.
Revision E (December 5, 2002)
Product Selector Guide and Read-Only
Characteristics
Added a 30 ns option to t
PACC and tOE standard for the
112R and 120R speed options.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the SecSi Sector, autoselect, and CFI
functions are unavailable when a program or erase
operation is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address
Figure 6. Program Suspend/Program Resume
Change wait time to 15
s.
CMOS Compatible
Added I
LR row to table
Changed V
IH1 and VIH2 minimum to 1.9.
Removed typos in notes.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV640MH112REI | 制造商:Advanced Micro Devices 功能描述:4M X 16 FLASH 3V PROM, 110 ns, PDSO56 |
| AM29LV640MU101RPCI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MU90NI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MU90RPC1 | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MU90RPCI | 制造商:Advanced Micro Devices 功能描述: |
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