- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376484 > AM29LV652D (Spansion Inc.) 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control PDF資料下載
參數(shù)資料
| 型號： | AM29LV652D |
| 廠商： | Spansion Inc. |
| 英文描述： | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
| 中文描述： | 128兆位（16米× 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃光控制記憶與VersatileIO |
| 文件頁數(shù)： | 26/55頁 |
| 文件大?。?/td> | 1181K |
| 代理商： | AM29LV652D |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁當(dāng)前第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
24
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Table 7.
System Interface String
Table 8.
Device Geometry Definition
Addresses (x8)
Data
Description
1Bh
27h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
V
PP
Min. voltage (00h = no V
PP
input present)
1Eh
00h
V
PP
Max. voltage (00h = no V
PP
input present)
1Fh
04h
Typical timeout per single byte write 2
N
μs
20h
00h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2
N
ms
22h
00h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
05h
Max. timeout for byte write 2
N
times typical
24h
00h
Max. timeout for buffer write 2
N
times typical
25h
04h
Max. timeout per individual block erase 2
N
times typical
26h
00h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses (x8)
Data
Description
27h
17h
Device Size = 2
N
byte
28h
29h
00h
00h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00h
00h
Max. number of bytes in multi-byte write = 2
N
(00h = not supported)
2Ch
01h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
7Fh
00h
00h
01h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00h
00h
00h
00h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
00h
00h
00h
00h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
00h
00h
00h
00h
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV652DU12RMAE | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
| AM29LV652DU12RMAF | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
| AM29LV652DU90RMAK | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
| AM29LV652DU90RMAE | TVS 5.6V 0.1J 15V-CV 1-ELEMENT SMD-0805 SN100 TR-7-PL |
| AM29LV652DU90RMAF | Varistor; Package/Case:0805; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.6V; Output Current Max:1A; Output Voltage Max:18V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800B-120DGC1 | 制造商:Spansion 功能描述:3V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |
| AM29LV800BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB-120EI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。