參數(shù)資料
型號(hào)： AM29LV652D
廠商： Spansion Inc.
英文描述： 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control
中文描述： 128兆位（16米× 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃光控制記憶與VersatileIO
文件頁數(shù)： 3/55頁
文件大小： 1181K
代理商： AM29LV652D
PRELIMINARY
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
24961
Issue Date:
October 29, 2004
Rev:
A
Amendment/
+4
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV652D
128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileIO
Control
DISTINCTIVE CHARACTERISTICS
■
Two 64 Megabit (Am29LV065D) in a single 63-ball 11
x 12 mm FBGA package (Note: Features will be
described for each internal Am29LV065D)
■
Two Chip Enable inputs
— Each CE# controls selection of one internal
Am29LV065D device
■
Single power supply operation
— 3.0 to 3.6 volt read, erase, and program operations
■
VersatileIO
control
— Device generates output voltages and tolerates input
voltages on DQ I/Os as determined by the voltage on
V
IO
input
■
High performance
— Access times as fast as 90 ns
■
Manufactured on 0.23 μm process technology
■
CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
■
Ultra low power consumption (typical values at 3.0 V,
5 MHz) for the part
— 9 mA typical active read current
— 26 mA typical erase/program current
— 400 nA typical standby mode current
■
Flexible sector architecture
— Two hundred fifty-six 64 Kbyte sectors
■
Sector Protection
— A hardware method to lock a sector to prevent
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically writes
and verifies data at specified addresses
■
Compatibility with JEDEC standards
— Except for the added CE2#, the FBGA is pinout and
software compatible with single-power supply Flash
— Superior inadvertent write protection
■
Minimum 1 million erase cycle guarantee per sector
■
63-ball FBGA Package
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
■
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
■
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
■
Ready/Busy# output (RY/BY#)
— Provides a hardware method of detecting program or
erase cycle completion
■
Hardware reset input (RESET#)
— Hardware method to reset the device for reading array
data
■
ACC input
— Accelerates programming time for higher throughput
during system production
■
Program and Erase Performance (V
HH
not applied to
the ACC input)
— Byte program time: 5 μs typical
— Sector erase time: 1.6 s typical for each 64 Kbyte
sector
■
20-year data retention at 125
°
C
— Reliable operation for the life of the system
相關(guān)PDF資料
PDF描述
AM29LV652DU12RMAE 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control
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