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參數(shù)資料
| 型號(hào)： | AM29LV652DU12RMAK |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
| 中文描述： | 16M X 8 FLASH 3V PROM, 120 ns, PBGA63 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63 |
| 文件頁(yè)數(shù)： | 50/55頁(yè) |
| 文件大小： | 1181K |
| 代理商： | AM29LV652DU12RMAK |
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48
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. CE# can be replaced with CE2# when referring to the second device within the package.
Parameter
Speed Options
JEDEC
Std
Description
90R
12R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
50
ns
t
DVEH
t
DS
Data Setup Time
Min
45
50
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
50
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Byte Programming Operation (Note 2)
Typ
5
μs
t
WHWH1
t
WHWH1
Accelerated Byte Programming Operation (Note 2)
Typ
4
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1.6
sec
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| AM29LV652D | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
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