參數(shù)資料
型號(hào): AM29LV652DU90RMAF
廠商: SPANSION LLC
元件分類: DRAM
英文描述: Varistor; Package/Case:0805; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.6V; Output Current Max:1A; Output Voltage Max:18V
中文描述: 16M X 8 FLASH 3V PROM, 90 ns, PBGA63
封裝: 11 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63
文件頁(yè)數(shù): 31/55頁(yè)
文件大?。?/td> 1181K
代理商: AM29LV652DU90RMAF
October 29, 2004
Am29LV652D
29
P R E L I M I N A R Y
After an erase-suspended program operation is com-
plete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard byte program operation.
Refer to
“Write Operation Status” on page 31
for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
“Autoselect Mode” on page 19
and
“Autoselect Com-
mand Sequence” on page 26
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The address
of the erase-suspended sector is required when writ-
ing this command. Further writes of the Resume com-
mand are ignored. Another Erase Suspend command
can be written after the chip resumes erasing.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See
Table 10, on page 30
for erase command
sequence.
2. See the section on DQ3 for information on the sector
erase timer.
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