參數(shù)資料
型號(hào)： AM29LV652DU90RMAF
廠商： SPANSION LLC
元件分類： DRAM
英文描述： Varistor; Package/Case:0805; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.6V; Output Current Max:1A; Output Voltage Max:18V
中文描述： 16M X 8 FLASH 3V PROM, 90 ns, PBGA63
封裝： 11 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63
文件頁數(shù)： 43/55頁
文件大?。?/td> 1181K
代理商： AM29LV652DU90RMAF
October 29, 2004
Am29LV652D
41
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the
“Erase And Programming Performance” on page 50
section for more information.
3. CE# can be replaced with CE2# when referring to the second device within the package.
Parameter
Speed Options
JEDEC
Std.
Description
90R
12R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
50
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
50
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Byte Programming Operation (Note 2)
Typ
5
μs
t
WHWH1
t
WHWH1
Accelerated Byte Programming Operation (Note 2)
Typ
4
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1.6
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
相關(guān)PDF資料
PDF描述
AM29LV652DU90RMAI Varistor; Package/Case:0805; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:14V; Output Current Max:0.75A; Output Voltage Max:32V
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