參數(shù)資料
型號: Am29LV800BT70RFIB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 32/42頁
文件大?。?/td> 571K
代理商: AM29LV800BT70RFIB
32
Am29LV800B
P R E L I M I N A R Y
AC CHARACTERISTICS
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
GHWL
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1.
SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
21490E-22
Figure 18.
Chip/Sector Erase Operation Timings
相關(guān)PDF資料
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AM29LV800DT-90WCF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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AM29LV800DT-120ED Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
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