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參數(shù)資料
| 型號(hào)： | AM29LV800DT-120ED |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| 中文描述： | 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁(yè)數(shù)： | 1/51頁(yè) |
| 文件大?。?/td> | 1628K |
| 代理商： | AM29LV800DT-120ED |
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July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Am29LV800D
Data Sheet
Publication Number
Am29LV800D_00
Revision
A
Amendment
4
Issue Date
January 21, 2005
For new designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration
path. Please refer to the S29AL008D Data Sheet for specifications and ordering information.
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PDF描述 |
|---|---|
| AM29N323D | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| AM29N323DT11AWKI | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| Am29PDS322D | High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-CDIP -55 to 125 |
| Am29PDS322DT10 | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800DT-120WBI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 120NS 48FBGA - Trays |
| AM29LV800DT-70SI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 44SOIC - Rail/Tube |
| AM29LV800DT70WBI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800DT-70WBI\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 48FBGA - Tape and Reel |
| AM29LV800DT-70WBI\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 48FBGA - Tape and Reel |
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