參數(shù)資料
型號(hào): AM29LV800BT80FCB
廠商: ADVANCED MICRO DEVICES INC
元件分類(lèi): PROM
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 80 ns, PDSO48
封裝: REVERSE, MO-142DD, TSOP-48
文件頁(yè)數(shù): 25/42頁(yè)
文件大小: 571K
代理商: AM29LV800BT80FCB
Am29LV800B
25
P R E L I M I N A R Y
DC CHARACTERISTICS (Continued)
Zero Power Flash
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
S
Time in ns
Note:
Addresses are switching at 1 MHz
21490E-13
Figure 9.
I
CC1
Current vs. Time (Showing Active and Automatic Sleep Currents)
10
8
2
0
1
2
3
4
5
Frequency in MHz
S
Note:
T = 25
°
C
21490E-14
Figure 10.
Typical I
CC1
vs. Frequency
2.7 V
3.6 V
4
6
相關(guān)PDF資料
PDF描述
AM29LV800DB-120WCC Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 180pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
AM29LV800DT-90WCF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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AM29LV800DT-120ED Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
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參數(shù)描述
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AM29LV800DB-70EF 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP
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AM29LV800DB-90ED 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
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