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| 型號(hào)： | AM29N323D |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 32兆位（2米× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁(yè)數(shù)： | 48/48頁(yè) |
| 文件大?。?/td> | 824K |
| 代理商： | AM29N323D |
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August 8, 2002
Am29N323D
47
Figure 18
, Initial Access with Power Saving (PS)
Function and Address Boundary Latency;
Figure
19
, Initial Access with Address Boundary Latency
Modified
Figure 18
to show previous and current
behavior of data and RDY. Added
Figure 19
to show
data and RDY behavior without PS enabled.
Revision B+6 (July 9, 2001)
Accelerated Program Operation
Deleted requirement that sectors be unlocked prior to
raising V
PP
to V
ID
.
Table 4
, Command Definitions
Changed the manufacturer ID to 21h for devices
requiring additional latency. (See relevant note in
table.)
Mask Set Revision
Added section.
Revision B+7 (December 7, 2001)
Global
Deleted preliminary status from document.
Simultaneous Read/Write Block Diagram
Added PS and RDY signals.
Autoselect Command Sequence
Clarified description of identifier codes.
DC Characteristics table
Added Note 6.
Table 4
, Command Definitions
Added row for autoselect revision ID command. Modi-
fied Note 9.
AC Characteristics, Synchronous/Burst Read table
Modified description of t
OE
. Deleted t
CEH
.
Figure 9
, Burst Mode Read
Added t
RYDS
, t
AVDO
to figure. Moved t
RACC
.
Hardware Reset figure and table
Changed parameter name for RESET# low during
Embedded Algorithms to t
Readyw.
Figure 17
, Latency with Boundary Crossing
Changed address, clock count, and data output num-
bering.
Figure 19
, Initial
Access with Address Boundary Latency
Added half cycle to D0 timing.
Mask Set Revision Table
Added sixth set revision.
Revision B+8 (January 8, 2002)
Added Appendix A.
Revision B+9 (August 8, 2002)
Global
Changed lower end of temperature range from -40°C to
-25°C.
Copyright 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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