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參數(shù)資料
| 型號： | AM29PDL127H85PCIN |
| 廠商： | Spansion Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 128兆位（8米× 16位），3.0伏的CMOS只，頁面模式同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁數(shù)： | 59/68頁 |
| 文件大?。?/td> | 750K |
| 代理商： | AM29PDL127H85PCIN |
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60
Am29PDL127H
June 30, 2003
ADV ANCE
I N FO RMAT I O N
AC CHARACTERISTICS
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
Notes:
1.
Figure indicates last two bus cycles of a program or erase operation.
2.
PA = program address, SA = sector address, PD = program data.
3.
DQ7# is the complement of the data written to the device. D
OUT is the data written to the device.
Figure 24.
Alternate CE# Controlled Write (Erase/Program) Operation Timings
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