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參數(shù)資料
| 型號： | AM29PDL127H85PCIN |
| 廠商： | Spansion Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 128兆位（8米× 16位），3.0伏的CMOS只，頁面模式同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁數(shù)： | 7/68頁 |
| 文件大?。?/td> | 750K |
| 代理商： | AM29PDL127H85PCIN |
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June 30, 2003
Am29PDL127H
13
ADV ANCE
I N FO RMAT I O N
(Note that this is a more restricted voltage range than
V
IH.) If CE# and RESET# are held at VIH, but not within
V
IO ± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device re-
quires standard access time (t
CE) for read access
when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until th e
operation is completed.
CC3 in the DC Characteristics table represents the
CMOS standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for t
ACC +
150 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
Note that during automatic sleep mode, OE# must be
at V
IH before the device reduces current to the stated
sleep mode specification. I
CC5 in the DC Characteris-
tics table represents the automatic sleep mode current
specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of t
RP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
SS±0.3 V, the device
draws CMOS standby current (I
CC4). If RESET# is held
at V
IL but not within VSS±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase op-
eration, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t
READY (during Embedded Algorithms). The
system can th us monito r RY/BY# to de termin e
whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not ex-
ecuting (RY/BY# pin is “1”), the reset operation is com-
pleted within a time of t
READY (not during Embedded
Algorithms). The system can read data t
RH after the
RESET# pin returns to V
IH.
Refer to the AC Characteristic tables for RESET# pa-
rameters and to Figure 14 for the timing diagram.
Output Disable Mode
When the OE# input is at V
IH, output from the device is
disabled. The output pins (except for RY/BY#) are
placed in the highest Impedance state
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