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參數(shù)資料
| 型號： | AM29PL160CB-120SI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 120 ns, PDSO44 |
| 封裝： | SO-44 |
| 文件頁數(shù)： | 35/44頁 |
| 文件大小： | 987K |
| 代理商： | AM29PL160CB-120SI |
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34
Am29PL160C
June 12, 2002
AC CHARACTERISTICS
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
Figure 16.
AC Waveforms for Chip/Sector Erase Operations
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle
Figure 17.
Data# Polling Timings (During Embedded Algorithms)
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
GHWL
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ0–DQ6
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
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