參數(shù)資料
型號: AM29PL160CB-120SI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
中文描述: 1M X 16 FLASH 3V PROM, 120 ns, PDSO44
封裝: SO-44
文件頁數(shù): 36/44頁
文件大?。?/td> 987K
代理商: AM29PL160CB-120SI
June 12, 2002
Am29PL160C
35
AC CHARACTERISTICS
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 18.
Toggle Bit Timings (During Embedded Algorithms)
WE#
CE#
OE#
High Z
t
OE
DQ6/DQ2
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
t
ACC
t
RC
Valid Data
Valid Status
(stops toggling)
Valid Status
(first read)
(second read)
Valid Status
VA
Note:
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 19.
DQ2 vs. DQ6 for Erase and
Erase Suspend Operations
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
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AM29PL160CB-120SKI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
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AM29PL160CB-65REI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
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