參數(shù)資料
型號(hào)： AM29SL160CB-100EIN
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述： 16兆位的CMOS 1.8伏只超低電壓快閃記憶體
文件頁(yè)數(shù)： 26/52頁(yè)
文件大?。?/td> 1232K
代理商： AM29SL160CB-100EIN
26
Am29SL160C
November 1, 2004
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does
not
require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations.
Table 12, on
page 28
shows the address and data requirements for
the chip erase command sequence.
Any commands written to the chip during the
Embedded Erase algorithm are ignored. Note that a
hardware reset
during the chip erase operation imme-
diately terminates the operation. The Chip Erase
command sequence should be reinitiated once the
device returns to reading array data, to ensure data
integrity.
The system can determine the status of the erase oper-
ation by using DQ7, DQ6, DQ2, or RY/BY#. See
“Write
Operation Status” on page 29
for information on these
status bits. When the Embedded Erase algorithm is
complete, the device returns to reading array data and
addresses are no longer latched.
Figure 4, on page 27
illustrates the algorithm for the
erase operation. See
“Erase/Program Operations” on
page 40
for parameters, and
Figure 18, on page 42
for
timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command.
Table 12, on page 28
shows the
address and data requirements for the sector erase
command sequence.
The device does
not
require the system to preprogram
the memory prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 μs begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of
sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
μs, otherwise the last address and command might not
be accepted, and erasure may begin. It is recom-
mended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts are re-enabled after the last Sector Erase
command is written. If the time between additional
sector erase commands can be assumed to be less
than 50 μs, the system need not monitor DQ3.
Any
command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to reading array data.
The system must
rewrite the command sequence and any additional
sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See
“DQ3: Sector Erase
Timer” on page 31
.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation begins, only the Erase
Suspend command is valid. All other commands are
ignored. Note that a
hardware reset
during the sector
erase operation immediately terminates the operation.
The Sector Erase command sequence should be rein-
itiated once the device returns to reading array data, to
ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. (Refer to
“Write Operation Status” on
page 29
for information on these status bits.)
Figure 4, on page 27
illustrates the algorithm for the
erase operation. Refer to the
“Erase/Program Opera-
tions” on page 40
for parameters, and to
Figure 18, on
page 42
for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to
interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 μs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation.
Addresses are “don’t-cares” when writing the Erase
Suspend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 μs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
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