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參數(shù)資料
| 型號： | AM29SL160CB-100EIN |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只超低電壓快閃記憶體 |
| 文件頁數(shù)： | 51/52頁 |
| 文件大小： | 1232K |
| 代理商： | AM29SL160CB-100EIN |
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November 1, 2004
Am29SL160C
51
REVISION SUMMARY
Revision A (December 1998)
Initial release.
Revision A+1 (January 1999)
Distinctive Characteristics
WP#/ACC pin:
In the third subbullet, deleted reference
to increased erase performance.
Device Bus Operations
Accelerated Program and Erase Operations:
Deleted
all references to accelerated erase.
Sector/Sector Block Protection and Unprotection:
Changed section name and text to include tables and
references to sector block protection and unprotection.
AC Characteristics
Accelerated Program Timing Diagram:
Deleted refer-
ence in title to accelerated erase.
Revision A+2 (March 23, 1999)
Connection Diagrams
Corrected the TSOP pinout on pins 13 and 14.
Revision A+3 (April 12, 1999)
Global
Modified the description of accelerated programming to
emphasize that it is intended only to speed in-system
programming of the device during the system produc-
tion process.
Distinctive Characteristics
Secured Silicon (SecSi) Sector bullet:
Added the 8-
byte unique serial number to description.
Device Bus Operations table
Modified Note 3 to indicate sector protection behavior
when V
IH
is asserted on WP#/ACC. Applied Note 3 to
the WP#/ACC column for write operations.
Ordering Information
Added the “N” designator to the optional processing
section.
Secured Silicon (SecSi) Sector Flash Memory
Region
Modified explanatory text to indicate that devices now
have an 8-byte unique ESN in addition to the 16-byte
random ESN. Added table for address range
clarification.
Revision A+4 (May 14, 1999)
Global
Deleted all references to the unique ESN.
Revision A+5 (July 23, 1999)
Global
Added 90 ns speed option.
Revision A+6 (September 1, 1999)
AC Characteristics
Hardware Reset (RESET#) table:
Deleted t
RPD
specifi-
cation.
Erase/Program Operations table:
Deleted t
OES
specification.
Revision A+7 (September 7, 1999)
Distinctive Characteristics
Ultra low power consumption bullet:
Corrected values
to match those in the DC Characteristics table.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Deleted t
OES
specification.
Revision B (December 14, 1999)
AC Characteristics—
Figure 17
. Program
Operations Timing and
Figure 18
. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision C (February 21, 2000)
Removed “Advance Information” designation from data
sheet. Data sheet parameters are now stable; only
speed, package, and temperature range combinations
are expected to change in future revisions.
Device Bus Operations table
Changed standby voltage specification to V
CC
± 0.2 V.
Standby Mode
Changed standby voltage specification to V
CC
± 0.2 V.
DC Characteristics table
Changed test conditions for I
CC3
, I
CC4
, I
CC5
to V
CC
± 0.2
V.
Revision C+1 (November 14, 2000)
Global
Added dash to speed options and OPNs. Added table
of contents.
AC Characteristics—Read Operations
Changed t
DF
to 16 ns for all speeds.
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