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參數(shù)資料
| 型號： | AM29SL160CB-100WCFN |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只超低電壓快閃記憶體 |
| 文件頁數(shù)： | 27/52頁 |
| 文件大小： | 1232K |
| 代理商： | AM29SL160CB-100WCFN |
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November 1, 2004
Am29SL160C
27
After the erase operation is suspended, the system can
read array data from or program data to any sector not
selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Normal read and write
timings and command definitions apply. Reading at any
address within erase-suspended sectors produces
status data on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. See
“Write
Operation Status” on page 29
for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine the
status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation.
See
“Write Operation Status” on page 29
for more
information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See
“Autoselect Command Sequence”
on page 24
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device resumes erasing.
Notes:
1. See
Table 12, on page 28
for erase command sequence.
2. See
“DQ3: Sector Erase Timer” on page 31
for more in-
formation.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFH
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29SL160CT-100WCEN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CT-100WCFN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CT-100WCIN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CT-120 | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CT-150 | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29SL160CT-100EIN | 制造商:Advanced Micro Devices 功能描述: |
| AM29SL800DB120WCI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 8MBIT 1MX8/512KX16 120NS 48FBGA - Trays |
| AM29SL800DB90WAD | 制造商:Spansion 功能描述: |
| AM29X305ADC | 制造商:Advanced Micro Devices 功能描述:Microprocessor, 8 Bit, 50 Pin, Ceramic, DIP |
| AM2A016 | 制造商:MAG-LITE 功能描述:Bulk |
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