參數(shù)資料
型號: AM29SL400CB100RWAI
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48
封裝: 6 X 8 MM, 0.80 MM PITCH, FBGA-48
文件頁數(shù): 29/44頁
文件大小: 945K
代理商: AM29SL400CB100RWAI
March 3, 2005
27
A d v a n c e I n f o r m a t i o n
AC Characteristics
Read Operations
Notes:
1.
Not 100% tested.
2.
See
Figure 11 on page 26
and
Table 7 on page 26
for test specifications.
Parameter
Description
Speed Options
JEDEC
Std
Test Setup
-100R
-110
-120
-150
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
100
110
120
150
ns
t
AVQV
t
ACC
Address to Output Delay
CE# = V
IL
OE# = V
IL
Max
100
110
120
150
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
100
110
120
150
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
35
45
50
65
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
OEH
Output Enable
Hold Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
Min
0
ns
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
OE
0 V
RY/BY#
RESET#
t
DF
t
OH
Figure 13.
Read Operations Timings
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