參數(shù)資料
型號: AM29SL400CB150WAD
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 256K X 16 FLASH 1.8V PROM, 150 ns, PBGA48
封裝: 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
文件頁數(shù): 32/44頁
文件大?。?/td> 945K
代理商: AM29SL400CB150WAD
30
March 3, 2005
A d v a n c e I n f o r m a t i o n
AC Characteristics
Erase/Program Operations
Notes:
1.
Not 100% tested.
2.
See the
Erase and Programming Performance on page 38
section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-100R
-110
-120
-150
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
110
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WLAX
t
AH
Address Hold Time
Min
50
55
60
70
ns
t
DVWH
t
DS
Data Setup Time
Min
50
55
60
70
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
50
55
60
70
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation (Notes 1, 2)
Byte
Typ
10
μs
Word
Typ
12
t
WHWH2
t
WHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
sec
t
VCS
V
CC
Setup Time
Min
50
μs
t
RB
Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Min
200
ns
相關(guān)PDF資料
PDF描述
AM29SL400CT150WAF CAP 150UF 4V 20% TANT SMD-7343-30 TR-7
AM29SL400CB150WAF 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL400CT150WAI 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL400CB150WAI 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL400CT120EF 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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