參數(shù)資料
型號(hào): AM29SL400CT120WAD
廠商: SPANSION LLC
元件分類: DRAM
英文描述: CAP,CERAMIC,100PF,5%,1KV
中文描述: 256K X 16 FLASH 1.8V PROM, 120 ns, PBGA48
封裝: 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
文件頁(yè)數(shù): 19/44頁(yè)
文件大?。?/td> 945K
代理商: AM29SL400CT120WAD
March 3, 2005
17
A d v a n c e I n f o r m a t i o n
When the Embedded Erase algorithm is complete,
the device returns to reading array data and ad-
dresses are no longer latched. The system can deter-
mine the status of the erase operation by using DQ7,
DQ6, DQ2, or RY/BY#. (Refer to
Write Operation
Status on page 18
for information on these status
bits.)
Figure 4
illustrates the algorithm for the erase opera-
tion. Refer to the
Erase/Program Operations on
page 30
for parameters, and to
Figure 18 on
page 32
for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to
interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sec-
tor erase operation, including the 50 μs time-out pe-
riod during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during
the Sector Erase time-out immediately terminates
the time-out period and suspends the erase opera-
tion. Addresses are
don’t-cares
when writing the
Erase Suspend command.
When the Erase Suspend command is written during
a sector erase operation, the device requires a maxi-
mum of 20 μs to suspend the erase operation. How-
ever, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends
the erase operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device
erase suspends
all sectors selected for erasure.)
Normal read and write timings and command defini-
tions apply. Reading at any address within
erase-suspended sectors produces status data on
DQ7–DQ0. The system can use DQ7, or DQ6 and
DQ2 together, to determine if a sector is actively
erasing or is erase-suspended. See
Write Operation
Status on page 18
for information on these status
bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data
within non-suspended sectors. The system can de-
termine the status of the program operation using
the DQ7 or DQ6 status bits, just as in the standard
program operation. See
Write Operation Status on
page 18
for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts
to the Erase Suspend mode, and is ready for another
valid operation. See
Autoselect Command S e-
quence on page 15
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase sus-
pend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written
after the device has resumed erasing.
Notes:
1.
See
Table 5 on page 18
for erase command sequence.
2.
See
DQ3: Sector Erase Timer on page 21
for more in-
formation.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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