- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376485 > AM29SL400CT150WAI (SPANSION LLC) 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29SL400CT150WAI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 256K X 16 FLASH 1.8V PROM, 150 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁數(shù)： | 19/44頁 |
| 文件大?。?/td> | 945K |
| 代理商： | AM29SL400CT150WAI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁
March 3, 2005
17
A d v a n c e I n f o r m a t i o n
When the Embedded Erase algorithm is complete,
the device returns to reading array data and ad-
dresses are no longer latched. The system can deter-
mine the status of the erase operation by using DQ7,
DQ6, DQ2, or RY/BY#. (Refer to
Write Operation
Status on page 18
for information on these status
bits.)
Figure 4
illustrates the algorithm for the erase opera-
tion. Refer to the
Erase/Program Operations on
page 30
for parameters, and to
Figure 18 on
page 32
for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to
interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sec-
tor erase operation, including the 50 μs time-out pe-
riod during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during
the Sector Erase time-out immediately terminates
the time-out period and suspends the erase opera-
tion. Addresses are
don’t-cares
when writing the
Erase Suspend command.
When the Erase Suspend command is written during
a sector erase operation, the device requires a maxi-
mum of 20 μs to suspend the erase operation. How-
ever, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends
the erase operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device
erase suspends
all sectors selected for erasure.)
Normal read and write timings and command defini-
tions apply. Reading at any address within
erase-suspended sectors produces status data on
DQ7–DQ0. The system can use DQ7, or DQ6 and
DQ2 together, to determine if a sector is actively
erasing or is erase-suspended. See
Write Operation
Status on page 18
for information on these status
bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data
within non-suspended sectors. The system can de-
termine the status of the program operation using
the DQ7 or DQ6 status bits, just as in the standard
program operation. See
Write Operation Status on
page 18
for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts
to the Erase Suspend mode, and is ready for another
valid operation. See
Autoselect Command S e-
quence on page 15
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase sus-
pend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written
after the device has resumed erasing.
Notes:
1.
See
Table 5 on page 18
for erase command sequence.
2.
See
DQ3: Sector Erase Timer on page 21
for more in-
formation.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29SL400CB150WAI | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL400CT120EF | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL400CB120EF | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL400CB110EC | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL400CB110ED | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29SL800DB120WCI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 8MBIT 1MX8/512KX16 120NS 48FBGA - Trays |
| AM29SL800DB90WAD | 制造商:Spansion 功能描述: |
| AM29X305ADC | 制造商:Advanced Micro Devices 功能描述:Microprocessor, 8 Bit, 50 Pin, Ceramic, DIP |
| AM2A016 | 制造商:MAG-LITE 功能描述:Bulk |
| AM2A026 | 制造商:MAG-LITE 功能描述:Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。