參數(shù)資料
型號: AM29SL800DB90
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù): 18/46頁
文件大小: 1177K
代理商: AM29SL800DB90
A D V A N C E I N F O R M A T I O N
March 17, 2003
Am29SL800D
17
Note:
See Table 5 for program command sequence.
Figure 3.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does
not
require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 5 shows
the address and data requirements for the chip erase
command sequence.
Any commands written to the chip during the
Embedded Erase algorithm are ignored. Note that a
hardware reset
during the chip erase operation imme-
diately terminates the operation. The Chip Erase
command sequence should be reinitiated once the
device has returned to reading array data, to ensure
data integrity.
The system can determine the status of the erase oper-
ation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write
Operation Status” for information on these status bits.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched.
Figure 4 illustrates the algorithm for the erase opera-
tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 18 for
timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. Table 5 shows the address and data
requirements for the sector erase command sequence.
The device does
not
require the system to preprogram
the memory prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 μs begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of
sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
μs, otherwise the last address and command might not
be accepted, and erasure may begin. It is recom-
mended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector Erase
command is written. If the time between additional
sector erase commands can be assumed to be less
than 50 μs, the system need not monitor DQ3.
Any
command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to reading array data.
The system must
rewrite the command sequence and any additional
sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector
Erase Timer” section.) The time-out begins from the
rising edge of the final WE# pulse in the command
sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a
hardware reset
during the
sector erase operation immediately terminates the
operation. The Sector Erase command sequence
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
相關PDF資料
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AM29SL800DT-100WCC 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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