參數(shù)資料
型號： AM41DL16X4D
英文描述： Am41DL16x4D - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述： Am41DL16x4D -堆疊式多芯片封裝（MCP）閃存和SRAM
文件頁數(shù)： 56/63頁
文件大?。?/td> 1052K
代理商： AM41DL16X4D
Am41DL16x4D
55
P R E L I M I N A R Y
AC CHARACTERISTICS
Figure 29.
SRAM Read Cycle
Notes:
1. WE# = V
IH
, if CIOs is low, ignore UB#s/LB#s timing.
1. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
2. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
Data Valid
High-Z
t
RC
CS#1
Address
UB#, LB#
OE#
Data Out
t
OH
t
AA
t
CO1
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
CS2
t
CO2
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相關(guān)代理商/技術(shù)參數(shù)
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AM41DL3208G 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM41DL3208GB25IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3208GB30IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3208GB35IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3208GB40IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
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