參數(shù)資料
型號： AM41DL32X8G
英文描述： 200NS, LCC, IND TEMP(EEPROM)
中文描述： Am41DL32x8G -堆疊式多芯片封裝（MCP）閃存和SRAM
文件頁數(shù)： 5/63頁
文件大?。?/td> 1052K
代理商： AM41DL32X8G
4
Am41DL16x4D
P R E L I M I N A R Y
Figure 22. Data#Polling Timngs (During Embedded Algorithms).. 48
Figure 23. Toggle Bit Timngs (During Embedded Algorithms)....... 49
Figure 24. DQ2 vs. DQ6.................................................................. 49
Temporary Sector/Sector Block Unprotect .............................50
Figure 25. Temporary Sector/Sector Block Unprotect
Timng Diagram............................................................................... 50
Figure 26. Sector/Sector Block Protect and Unprotect
Timng Diagram............................................................................... 51
Alternate CE#f Controlled Erase and ProgramOperations ....52
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Op-
eration Timngs................................................................................ 53
SRAMRead Cycle ..................................................................54
Figure 28. SRAM Read Cycle
—
Address Controlled....................... 54
Figure 29. SRAM Read Cycle......................................................... 55
SRAMWrite Cycle ..................................................................56
Figure 30. SRAM Write Cycle
—
WE# Control................................. 56
Figure 31. SRAM Write Cycle
—
CE1#s Control............................. 57
Figure 32. SRAM Write Cycle
—
UB#s and LB#s Control............... 58
Flash Erase And Programming Performance . 59
Flash Latchup Characteristics. . . . . . . . . . . . . . . 59
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 59
FLASH Data Retention . . . . . . . . . . . . . . . . . . . . . 59
SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 60
Figure 33. CE1#s Controlled Data Retention Mode....................... 60
Figure 34. CE2s Controlled Data Retention Mode......................... 60
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 61
FLA069
—
69-Ball Fine-Pitch Grid Array 8 x 11 mm ...............61
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 62
Revision A (October 24, 2001) ...............................................62
相關(guān)PDF資料
PDF描述
AM45DL32X8G 200NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
AM45DL6408G 250NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
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AM46-0007 DIE(EEPROM)
AM486DE2 Am486DE2 Microprocessor Data Sheet
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM41DL6408G 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM41DL6408G25IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL6408G25IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL6408G30IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL6408G30IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
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