參數(shù)資料
型號(hào): AM41DL6408G55IT
廠(chǎng)商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述: 64兆位(8米× 8位/ 4米x 16位),3.0伏的CMOS只,同時(shí)作業(yè)閃存和8兆位(1 M中的x 8-Bit/512畝x 16位),靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 56/63頁(yè)
文件大?。?/td> 573K
代理商: AM41DL6408G55IT
August 19, 2002
Am41DL6408G
55
P R E L I M I N A R Y
AC CHARACTERISTICS
Figure 29.
SRAM Read Cycle
Notes:
1. WE# = V
IH
, if CIOs is low, ignore UB#s/LB#s timing.
2. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
Data Valid
High-Z
t
RC
CE#1s
Address
OE#
Data Out
t
OH
t
AA
t
CO1
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
HZ
CE2s
t
CO2
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