- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366538 > AM41DL6408G55IT (Advanced Micro Devices, Inc.) 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | AM41DL6408G55IT |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| 中文描述： | 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同時(shí)作業(yè)閃存和8兆位（1 M中的x 8-Bit/512畝x 16位），靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 63/63頁(yè) |
| 文件大?。?/td> | 573K |
| 代理商： | AM41DL6408G55IT |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)當(dāng)前第63頁(yè)
62
Am41DL6408G
August 19, 2002
P R E L I M I N A R Y
REVISION SUMMARY
Revision A (October 24, 2001)
Initial release.
Revision A+1 (November 26, 2001)
Global
The abbreviation for Sector Address has been
changed from SA to SADD.
Connection Diagrams
Changed ball E4 to “Shared” coloring.
Tables 1–4, Device Bus Operations
Added Table 4. Changed formatting and specifications
lit-chip offerings.
Table 6, Bank Address
Added table.
Table 13, Primary Vendor-Specific Extended Query
Modified descriptions for addresses 4Ah, 4Fh. Deleted
note.
Table 14, Am29DL640G Command Definitions
Corrected descriptions for SADD and BA in legend.
Clarified Note 5.
DC Characteristics table
Changed minimum specification for V
ID
.
Flash Read-Only Operations table
Changes maximum t
OE
for 85 ns SRAM.
Erase and Program Operations table, Alternate
CE#f Controlled Erase and Program Operations
table
Changed t
AH
specification for both 70 and 85 ns.
Changed t
DS
for 70 ns, t
WHWH1
, t
WHWH2
, and t
BUSY
.
Flash Erase And Programming Performance table
Changed typical and maximum specifications for sec-
tor erase time. Changed typical specification of chip
erase.
Revision B (August 19, 2002)
Global
Added 55 ns SRAM speed grade.
MCP Block Diagram
Removed A-1 from DQ15/A-1 input to Flash Memory
and SRAM
Trademarks
Copyright 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM41DL6408H | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408H8H70IS | TV 6C 6#20 PIN WALL RECP |
| AM41DL6408H8H70IT | TV 6C 6#20 PIN WALL RECP |
| AM41DL6408H8H71IS | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:6; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| AM41DL6408H8H71IT | TV 6C 6#20 PIN WALL RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM41DL6408G70IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408G70IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408G71IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408G71IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408G85I | 制造商:Spansion 功能描述:COMBO 4MX16/8MX8 FLASH + 512KX16/1MX8 SRAM 3V/3.3V 73FBGA - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。